power module 1 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG12300D-BN3MM 1200v igbt family features applications ? high short circuit capability,self limiting short circuit cur rent ? igbt chip(1200v npt tec hnology) ? v ce(sat) with positive temperature coeffcient ? fast switching and short t ail current ? free wheeling diodes with fast and sof t reverse recovery ? low switc hing losses absolute maximum ratings (t c = 25c, unless otherwise specifed) symbol parameters test conditions values unit igbt v ces collector - emitter voltage t vj =25c 1200 v v ges gate - emitter voltage 20 v i c dc collector current t c =25c 450 a t c =75c 300 a i cm repetitive peak collector current t p =1ms 600 a p tot power dissipation per igbt 1450 w diode v rrm repetitive reverse voltage t vj =25c 1200 v i f(av) average forward current t c =25c 450 a t c =75c 300 a i frm repetitive peak forward current t p =1ms 600 a i 2 t t vj =125c, t=10ms, v r =0v 14500 a 2 s module characteristics (t c = 25c, unless otherwise specifed) symbol parameters test conditions min typ max unit t vj max) max. junction temperature 150 c t vj op operating temperature -40 125 c t stg storage temperature -40 125 c v isol insulation test voltage ac, t=1min 3000 v cti comparative tracking index module case exposed to 0.1% ammonium chloride solution per ul and iec standards 350 v torque module-to-sink recommended (m6) 3 5 nm torque module electrodes recommended (m6) 2.5 5 nm weight 320 g ? motor drives ? inverter ? converter ? smps and ups ? welder ? induction heating life support note: not intended for use in life support or life saving applications the products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG12300D-BN3MM series 300a dual igbt rohs agency agency file number e71639 agency approvals
power module 2 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG12300D-BN3MM 1200v igbt family symbol parameters test conditions min typ max unit igbt v ge(th) gate - emitter threshold voltage v ce =v ge , i c =12ma 4.5 5.5 6.5 v v ce(sat) collector - emitter saturation voltage i c =300a, v ge =15v, t vj =25c 3.2 v i c =300a, v ge =15v, t vj =125c 3.85 v i ces collector leakage current v ce =1200v, v ge =0v, t vj =25c 2 ma v ce =1200v, v ge =0v, t vj =125c 10 ma i ges gate leakage current v ce =0v,v ge =15v, t vj =125c -400 400 a r gint intergrated gate resistor 1. 3 q ge gate charge v ce =600v, i c =300a , v ge =15v 3.2 c c ies input capacitance v ce =25v, v ge =0v, f =1mhz 22 nf c res reverse transfer capacitance 1. 0 nf t d(on) turn - on delay time v cc =600v i c =300a r g =3.3 v ge =15v inductive load t vj =25c 110 ns t vj =125c 120 ns t r rise time t vj =25c 70 ns t vj =125c 80 ns t d(off) turn - off delay time t vj =25c 550 ns t vj =125c 600 ns t f fall time t vj =25c 50 ns t vj =125c 60 ns e on turn - on energy t vj =25c 18 mj t vj =125c 29 mj e off turn - off energy t vj =25c 14 mj t vj =125c 22 mj i sc short circuit current t psc 10s , v ge =15v t vj =125c,v cc =900v 1200 a r thjc junction-to-case thermal resistance (per igbt) 0.085 k/w diode v f forward voltage i f =300a , v ge =0v, t vj =25c 2.0 v i f =300a , v ge =0v, t vj =125c 2.05 v i rrm max. reverse recovery current i f =300a , v r =-600v 300 a t rr reverse recovery time d if /dt=6000a/s 350 ns e rec reverse recovery energy t vj =125c 15.2 mj r thjcd junction-to-case thermal resistance (per diode) 0.15 k/w electrical and thermal specifcations (t c = 25c, unless otherwise specifed)
power module 3 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG12300D-BN3MM 1200v igbt family figure 1: typical output characteristics i c (a) v ce ?v? t vj =125c t vj =25 c 600 500 10 0 0 1 2 34 5 v ge =15v 6 200 400 300 figure 2: typical output characteristics v ge ?v? 0 100 i c (a) 200 600 t vj =25c t vj =125c v ce =20v 12 9 01 6 7 5 8 11 400 500 300 figure 3: typical transfer characteristics 40 120 20 0 02 .5 10 e on e off (mj) e on e of f r g ? ? v ce =600 v i c =300 a v ge =15v t vj =125c 80 5 7.5 12.5 15 60 100 figure 4: switching energy vs. gate resistor 0 100 i c ?a? v ce =600v r g =3.3 v ge =15v t vj =125c 600 200 e off e on 0 10 70 90 e on e off (mj) 80 500 20 60 40 50 30 300 400 figure 5: switching energy vs. collector current figure 6: reverse biased saf e operating area 0 100 400 700 0 200 400 6008 00 1000 1200 v ce ?v? 1400 i c (a) 500 600 200 300 r g =3.3 v ge =15v t vj =125c v ce ?v? 4 3 10 i c (a) t vj =125c 25 6 600 0 500 100 200 400 300
power module 4 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG12300D-BN3MM 1200v igbt family figure 7: diode forw ard characteristics v f ?v? 1 3 2 0 0 120 600 240 i f (a) t vj =125c t vj =25c 4 480 360 e rec (mj) r g ? ? 0 12 8 4 0 20 i f =300 a v ce =600 v t vj =125c 16 2.5 5 7.5 15 10 12.5 figure 8: switching energy vs. gate resistort e rec (mj) 8 4 0 i f (a) 100 0 24 r g =3.3 v ce =600v t vj =125c 300 200 12 20 250 50 150 16 figure 9: switching energy vs. forward current rectangular pulse duration (seconds) z thj c (k/w ) 0.001 0.01 0. 11 10 0.001 0.01 1 diode igb t 0.1 figure 10: tr ansient thermal impedance
power module 5 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG12300D-BN3MM 1200v igbt family packing options part number marking weight packing mode m.o.q MG12300D-BN3MM MG12300D-BN3MM 320g bulk pack 30 part numbering system part marking system product type m: power module module type g: igbt circuit type wafer type package type MG12300D-BN3MM voltage rating current rating assembly site 12: 1200v 300: 300a d: package d b: 2x(igbt+fwd) dimensions-package d circuit diagram and pin assignment
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